Applied Physics Express (Jan 2024)
Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization
Abstract
Stochastic magnetic tunnel junctions (s-MTJs) are attracting attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance $\left\langle R\right\rangle $ of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H _z and temperatures T = 20 °C–130 °C. We observe that both relaxation time (time-domain response) and the slope of the $\left\langle R\right\rangle $ – ${H}_{z}$ curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.
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