Applied Physics Express (Jan 2024)

Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization

  • Haruna Kaneko,
  • Rikuto Ota,
  • Keito Kobayashi,
  • Shun Kanai,
  • Mehrdad Elyasi,
  • Gerrit E. W. Bauer,
  • Hideo Ohno,
  • Shunsuke Fukami

DOI
https://doi.org/10.35848/1882-0786/ad43b0
Journal volume & issue
Vol. 17, no. 5
p. 053001

Abstract

Read online

Stochastic magnetic tunnel junctions (s-MTJs) are attracting attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance $\left\langle R\right\rangle $ of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H _z and temperatures T = 20 °C–130 °C. We observe that both relaxation time (time-domain response) and the slope of the $\left\langle R\right\rangle $ – ${H}_{z}$ curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.

Keywords