Fabrication of GaN single crystals at 700°C using Na-Li-Ca mixed flux system
Xi Wu,
Hangfei Hao,
Zhenrong Li,
Shiji Fan,
Zhuo Xu
Affiliations
Xi Wu
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Hangfei Hao
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Zhenrong Li
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Shiji Fan
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Zhuo Xu
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
GaN single crystals were grown in Na-Li-Ca flux system of which Li-Ca gradually replaces Na. X-ray powder diffraction analysis confirmed that the structure of GaN samples was wurtzite. As concentration of Li-Ca in flux increased, the shape of GaN crystals was changed from pyramidal, prism to platelets in sequence, and the color of them became transparent gradually. Among of them, the transparent prism crystals were grown first at 700°C when the concentration of Li-Ca was 31.6 mol% and 48.9 mol% in flux solution, respectively. Raman spectra implied that these crystals were stress-free and the transparent crystal grown in the high concentration of Li-Ca solution had high structural quality or low impurity concentrations.