Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Yen-Wei Yeh; Su-Hui Lin; Tsung-Chi Hsu; Shouqiang Lai; Po-Tsung Lee; Shui-Yang Lien; Dong-Sing Wuu; Guisen Li; Zhong Chen; Tingzhu Wu; Hao-Chung Kuo

doi:10.1186/s11671-021-03623-x

Nanoscale Research Letters (Nov 2021)

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Yen-Wei Yeh,
Su-Hui Lin,
Tsung-Chi Hsu,
Shouqiang Lai,
Po-Tsung Lee,
Shui-Yang Lien,
Dong-Sing Wuu,
Guisen Li,
Zhong Chen,
Tingzhu Wu,
Hao-Chung Kuo

Affiliations

Yen-Wei Yeh: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University
Su-Hui Lin: Fujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen University
Tsung-Chi Hsu: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University
Shouqiang Lai: Fujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen University
Po-Tsung Lee: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University
Shui-Yang Lien: School of Opto-Electronic and Communication Engineering, Xiamen University of Technology
Dong-Sing Wuu: Department of Materials Science and Engineering, National Chung Hsing University
Guisen Li: Unicompound Semiconductor Corporation
Zhong Chen: Fujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen University
Tingzhu Wu: Fujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen University
Hao-Chung Kuo: Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University

DOI: https://doi.org/10.1186/s11671-021-03623-x
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 14

Abstract

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Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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