A comparative study of hole and electron inversion layer quantization in MOS structures

Abstract

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

Keywords

• inversion quantization
• hole
• modeling
• inversion layers
• MOS devices