Applied Sciences (May 2022)

The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy

  • Walter R. Buchwald,
  • Robert E. Peale,
  • Perry C. Grant,
  • Julie V. Logan,
  • Preston T. Webster,
  • Christian P. Morath

DOI
https://doi.org/10.3390/app12115317
Journal volume & issue
Vol. 12, no. 11
p. 5317

Abstract

Read online

A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in defects located in the depletion width of a semiconductor diode. From digitized transients acquired at fixed temperatures, this method produces a rate–domain spectral signature associated with all defects in the semiconductor. For signal-to-noise ratio of 1000, defect levels with carrier emission rates differing by as little as 1.5 times may be distinguished.

Keywords