Evolution of dielectric and ferroelectric relaxor states in Al3+-doped BaTiO3
K. Vani,
Viswanathan Kumar
Affiliations
K. Vani
Center for Materials for Electronics Technology, Scientific Society, Department of Electronics and Information Technology, Ministry of Communications and Information Technology, Government of India, Thrissur 680 581, Kerala, India
Viswanathan Kumar
Center for Materials for Electronics Technology, Scientific Society, Department of Electronics and Information Technology, Ministry of Communications and Information Technology, Government of India, Thrissur 680 581, Kerala, India
In ferroelectric BaTiO3, we report the evolution of the Dielectric Relaxor and Ferroelectric Relaxor states as a function of B-site doped Al3+ concentration. The relaxor states occur after the paraelectric-ferroelectric phase transition upon cooling. Two different mechanisms are proposed; one based on migration of oxygen vacancies for symmetry-confirmation and the other based on disruption of long-range ferroelectric order by high concentrations of Al3+ ions at the B-site.
