Publisher Correction: Ballistic geometric resistance resonances in a single surface of a topological insulator

Abstract

In the original version of this Article, the second and third sentences of the first paragraph of the “Gate voltage and antidot period dependencies” section of the Results originally incorrectly read “The characteristic evolution of the sheet resistance ρ □=ρ □ (B=0) with V g shown for three antidot samples and an unpatterned reference sample in Fig. 3a. The maxima of ρ xx, located between V g~0.5 and 1 V, reflect the charge neutrality point (CNP), corresponding to an E F position located slightly in the valence band (see band structure in Fig. 3b).” In the corrected version, “$${\mathrm{\rho }}_\square = {\mathrm{\rho }}_\square (B = 0)$$ ρ□=ρ□(B=0) ” is replaced by “$${\mathrm{\rho }}_\square = {\mathrm{\rho }}_{{\mathrm{xx}}}(B = 0)$$ ρ□=ρxx(B=0) ”, and “The maxima of $${\mathrm{\rho }}_{{\mathrm{xx}}}$$ ρxx ” is replaced by “The maxima of $${\mathrm{\rho }}_\square$$ ρ□ ”.