Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−x Sn x Te nanowires

Abstract

Abstract We investigate the full and half-shells of Pb1−x Sn x Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV–VI shell with respect to the III–V core the lattice mismatch between both materials along the nanowire axis is less than 4%. The Pb1−x Sn x Te solid solution is chosen due to the topological crystalline insulator properties above some critical concentrations of Sn (x ≥ 0.36). The IV–VI shells are grown with different compositions spanning from binary SnTe, through Pb1−x Sn x Te with decreasing x value down to binary PbTe (x = 0). The samples are analysed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100) Pb1−x Sn x Te on the sidewalls of wurtzite GaAs NWs.