Leveraging GaN for DC-DC Power Modules for Efficient EVs: A Review

Abstract

Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern power electronics applications. Material attributes of wide-band-gap devices (such as GaN and SiC) possess the ability to bridge these gaps. They can be used for higher power applications and provide high power-density, high efficiency and better thermal performance. GaN-based devices in electric vehicle power modules make the vehicle more efficient, achieving an extended range for the same battery size. Worldwide, researchers and engineers are working on GaN-based power-electronics modules. On the one hand, the utilisation of GaN switches in power modules eliminates a few existing design concerns. While it also introduces new challenges for designers. Mere replacing Si with GaN doesn’t give the stipulated result. This article identifies the works related to GaN-based DC-DC converter modules to determine how researchers address the circuit design issues with GaN. This paper presents a detailed description of the material benefits of GaN and paves the path of future work by identifying the research gap in the field of GaN-based DC-DC converters.

Keywords

• Electric vehicle
• Gallium nitride (GaN)
• high-frequency DC-DC converter
• isolated converter
• non-isolated converter
• wide-band-gap devices