Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki (May 2015)

DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT

  • L. I. Guzilova,
  • V. N. Maslov,
  • K. E. Aifantis,
  • A. E. Romanov,
  • V. I. Nikolaev

DOI
https://doi.org/10.17586/2226-1494-2015-15-3-546-549
Journal volume & issue
Vol. 15, no. 3
pp. 546 – 549

Abstract

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The results of microhardness measurements of β-Ga2O3 single crystals for (001) crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values ​​ were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values ​​obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.

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