Role of the magnetic anisotropy in organic spin valves

V. Kalappattil; R. Geng; S.H. Liang; D. Mukherjee; J. Devkota; A. Roy; M.H. Luong; N.D. Lai; L.A. Hornak; T.D. Nguyen; W.B. Zhao; X.G. Li; N.H. Duc; R. Das; S. Chandra; H. Srikanth; M.H. Phan

doi:10.1016/j.jsamd.2017.07.010

Journal of Science: Advanced Materials and Devices (Sep 2017)

Role of the magnetic anisotropy in organic spin valves

V. Kalappattil,
R. Geng,
S.H. Liang,
D. Mukherjee,
J. Devkota,
A. Roy,
M.H. Luong,
N.D. Lai,
L.A. Hornak,
T.D. Nguyen,
W.B. Zhao,
X.G. Li,
N.H. Duc,
R. Das,
S. Chandra,
H. Srikanth,
M.H. Phan

Affiliations

V. Kalappattil: Department of Physics, University of South Florida, Tampa, FL 33620, USA
R. Geng: Department of Physics and Astronomy, University of Georgia, Athens, GA 30602, USA
S.H. Liang: Department of Physics and Astronomy, University of Georgia, Athens, GA 30602, USA
D. Mukherjee: Technical Research Center, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India
J. Devkota: Department of Physics and Astronomy, University of Georgia, Athens, GA 30602, USA
A. Roy: Department of Chemistry, University of Georgia, Athens, GA 30602, USA
M.H. Luong: Department of Physics and Astronomy, University of Georgia, Athens, GA 30602, USA
N.D. Lai: Laboratoire de Photonique Quantique et Moléculaire, Ecole Normale Supérieure de Cachan, UMR 8537, CentraleSupélec, CNRS, Université Paris-Saclay, 94235 Cachan, France
L.A. Hornak: College of Engineering, University of Georgia, Athens, GA 30602, USA
T.D. Nguyen: Department of Physics and Astronomy, University of Georgia, Athens, GA 30602, USA
W.B. Zhao: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China
X.G. Li: Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China
N.H. Duc: Key Laboratory for Micro-nano Technology, VNU University of Engineering and Technology, Vietnam National University, Hanoi, 144 Xuan Thuy Road, Cau Giay, Hanoi, Viet Nam
R. Das: Department of Physics, University of South Florida, Tampa, FL 33620, USA
S. Chandra: Department of Physics, University of South Florida, Tampa, FL 33620, USA
H. Srikanth: Department of Physics, University of South Florida, Tampa, FL 33620, USA
M.H. Phan: Department of Physics, University of South Florida, Tampa, FL 33620, USA

DOI: https://doi.org/10.1016/j.jsamd.2017.07.010
Journal volume & issue: Vol. 2, no. 3
pp. 378 – 384

Abstract

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Magnetic anisotropy plays an important role in determining the magnetic functionality of thin film based electronic devices. We present here, the first systematic study of the correlation between magnetoresistance (MR) response in organic spin valves (OSVs) and magnetic anisotropy of the bottom ferromagnetic electrode over a wide temperature range (10 K–350 K). The magnetic anisotropy of a La0.67Sr0.33MnO3 (LSMO) film epitaxially grown on a SrTiO3 (STO) substrate was manipulated by reducing film thickness from 200 nm to 20 nm. Substrate-induced compressive strain was shown to drastically increase the bulk in-plane magnetic anisotropy when the LSMO became thinner. In contrast, the MR response of LSMO/OSC/Co OSVs for many organic semiconductors (OSCs) does not depend on either the in-plane magnetic anisotropy of the LSMO electrodes or their bulk magnetization. All the studied OSV devices show a similar temperature dependence of MR, indicating a similar temperature-dependent spinterface effect irrespective of LSMO thickness, resulting from the orbital hybridization of carriers at the OSC/LSMO interface.

Published in Journal of Science: Advanced Materials and Devices

ISSN: 2468-2284 (Print); 2468-2179 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/journal-of-science-advanced-materials-and-devices

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