Study on Characteristics of 4.5 kV Reverse Blocking IGCT for HVDC

Abstract

As a new fully controlled power electronic device with bidirectional blocking voltage and forward controllable turn off, reverse blocking IGCT has attracted more and more attention in power grid applications. The status,causes of commutation failure in HVDC applications and the requirements for power semiconductor devices were analyzed, and the characteristics of different devices and different IGCT types was compared. At the same time, the static characteristics, on-state characteristics and switching characteristics of 4.5 kV reverse blocking IGCT were analyzed theoretically and simulated. Finally, the gate driver driven high-level energy taking, black start and adaptability to HVDC conditions were verified by synthesis test. The test results showed that 4.5 kV reverse blocking IGCT could be used as one of the preferred devices to enhance the ability of HVDC to resist commutation failure.

Keywords

• HVDC
• commutation failure
• RB-IGCT
• static characteristics
• switching characteristics
• black start
• simulation