Nature Communications (May 2017)
Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
Abstract
Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.