Nature Communications (May 2017)

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

  • Zhongnan Xi,
  • Jieji Ruan,
  • Chen Li,
  • Chunyan Zheng,
  • Zheng Wen,
  • Jiyan Dai,
  • Aidong Li,
  • Di Wu

DOI
https://doi.org/10.1038/ncomms15217
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 9

Abstract

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Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.