Arabian Journal of Chemistry (Jan 2022)

Modification in structural, optical, morphological, and electrical properties of zinc oxide (ZnO) nanoparticles (NPs) by metal (Ni, Co) dopants for electronic device applications

  • Shahroz Saleem,
  • Muhammad Hasnain Jameel,
  • Naheed Akhtar,
  • Nousheen Nazir,
  • Asad Ali,
  • Abid Zaman,
  • Ateequr Rehman,
  • Shoaib Butt,
  • Fozia Sultana,
  • Muhammad Mushtaq,
  • Jing Hui Zeng,
  • Mongi Amami,
  • Khaled Althubeiti

Journal volume & issue
Vol. 15, no. 1
p. 103518

Abstract

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In the present work, Zinc Oxide (ZnO) nanoparticles (NPs) were synthesized by the chemical co-precipitation method using Zinc Chloride as the initial chemical, while Nickel and Cobalt chloride as dopants. Phase identification of metal (Ni, Co) doped Zinc Oxide nanoparticles (NPs) was observed using x-ray diffraction (XRD). The small lattice distortion or phase changes appeared due to shifting of diffraction angles peaks towards larger angle in ZnO are corresponded to metal (Ni, Co) dopant. The average crystallite size appears to decrement in NP size from 7.67 nm to 6.52 nm and 5.35 nm to 5.17 nm with increasing 5 % to 80 % of metal (Ni, Co) dopant respectively. The optical characteristics, including the absorption spectra of the prepared sample were observed through UV–Vis spectroscopy, Meanwhile SEM confirmed the observation of composition change in specimen with metal (Ni, Co) dopant concentration. The bandgap value was also found decrement 5.23 eV to 5.05 eV with increment of metal (Ni, Co) dopant concentration. The functional groups were measured by Fourier transformation infrared spectroscopy (FTIR). FTIR peaks found the metal (Ni, Co) doped ZnO with the vibration mode of (Zn2+ –O2−) ions due to the increment of dopant concentrations. Furthermore, electrical results show the ohmic behavior of prepared samples. These findings indicate the possibility of tuning optical, structural and electrical properties of metal (Ni, Co) doped ZnO with various dopant concentrations of Nickel and will have great potential to find application in optoelectronic devices.

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