Lattice Matched AlAs/GaAs/GaAs0.94Bi0.0583/GaAs0.91Bi0.0857 Multi-Junction Solar Cell with Optimized Thickness: A Theoretical Approach

Abstract

In this work we proposed a new four junction AlAs/GaAs/GaAs0.94Bi0.0583/GaAs0.91Bi0.0587 based solar cell, where AlAs (Eg=2.17eV) and GaAs0.91Bi0.0587 (Eg=0.7eV) were used as uppermost and bottom layer respectively. All the calculations were done based on spectral p-n junction model (modified version) for three air mass conditions (AM 1.5D, AM 1.5G and AM 0) using Matlab simulation package. The four latticed-matched sub-layers were considered to be connected in series for producing optical transparency and maximum current conduction through top to bottom layer. All the calculated solar cell parameters such as efficiency, short-circuit current density, open-circuit voltage, fill factor showed better results for air mass zero spectral condition. The J-V characteristic curves were plotted to visualize the performance of the multijunction solar cell. The maximum photo-current conversion efficiency, open-circuit voltage and fill factor for AM 0 condition were found to be 64.8%, 3.6463 Volt and 0.9578 respectively. Thus, the proposed high efficiency multijunction solar cell will contribute in solar cell industry to aid in design and selection of proper solar cells for practical application.

Keywords

• gaasbi
• multijunction solar cell
• efficiency
• j-v characteristics
• matlab