Analysis of Threshold Voltage Flexibility in Ultrathin-BOX  SOI FinFETs

Kazuhiko Endo; Shinji Migita; Yuki Ishikawa; Takashi Matsukawa; Shin-ichi O'uchi; Junji Tsukada; Wataru Mizubayashi; Yukinori Morita; Hiroyuki Ota; Hitomi Yamauchi; Meishoku Masahara

doi:10.3390/jlpea4020110

Journal of Low Power Electronics and Applications (May 2014)

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Kazuhiko Endo,
Shinji Migita,
Yuki Ishikawa,
Takashi Matsukawa,
Shin-ichi O'uchi,
Junji Tsukada,
Wataru Mizubayashi,
Yukinori Morita,
Hiroyuki Ota,
Hitomi Yamauchi,
Meishoku Masahara

Affiliations

Kazuhiko Endo: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Shinji Migita: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Yuki Ishikawa: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Takashi Matsukawa: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Shin-ichi O'uchi: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Junji Tsukada: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Wataru Mizubayashi: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Yukinori Morita: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hiroyuki Ota: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hitomi Yamauchi: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Meishoku Masahara: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

DOI: https://doi.org/10.3390/jlpea4020110
Journal volume & issue: Vol. 4, no. 2
pp. 110 – 118

Abstract

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A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

Published in Journal of Low Power Electronics and Applications

ISSN: 2079-9268 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Applications of electric power
Website: http://www.mdpi.com/journal/jlpea

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