Nature Communications (Apr 2016)

Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

  • S. K. Kushwaha,
  • I. Pletikosić,
  • T. Liang,
  • A. Gyenis,
  • S. H. Lapidus,
  • Yao Tian,
  • He Zhao,
  • K. S. Burch,
  • Jingjing Lin,
  • Wudi Wang,
  • Huiwen Ji,
  • A. V. Fedorov,
  • Ali Yazdani,
  • N. P. Ong,
  • T. Valla,
  • R. J. Cava

DOI
https://doi.org/10.1038/ncomms11456
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 9

Abstract

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An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.