New-Generation Ferroelectric AlScN Materials

Yalong Zhang; Qiuxiang Zhu; Bobo Tian; Chungang Duan

doi:10.1007/s40820-024-01441-1

Nano-Micro Letters (Jun 2024)

New-Generation Ferroelectric AlScN Materials

Yalong Zhang,
Qiuxiang Zhu,
Bobo Tian,
Chungang Duan

Affiliations

Yalong Zhang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University
Qiuxiang Zhu: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University
Bobo Tian: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University
Chungang Duan: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University

DOI: https://doi.org/10.1007/s40820-024-01441-1
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 31

Abstract

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Highlights Ferroelectricity and domain dynamics of emerging ferroelectric AlScN films were discussed. The performance optimization of ferroelectric AlScN films grown by different deposition techniques was comprehensively analyzed. The challenges and perspectives regarding the commercial avenue of AlScN-based memories and in-memory computing applications were summarized.

Published in Nano-Micro Letters

ISSN: 2311-6706 (Print); 2150-5551 (Online)
Publisher: SpringerOpen
Country of publisher: Germany
LCC subjects: Technology
Website: http://www.springer.com/40820

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Abstract

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