Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

• Chia-Feng Lin,
• Kun-Pin Huang,
• Han-Wei Wang,
• Kuei-Ting Chen,
• Cheng-Jie Wang,
• Yu-Cheng Kao,
• Hsiang Chen,
• Yung-Sen Lin

Affiliations

Chia-Feng Lin

Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

Kun-Pin Huang

Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

Han-Wei Wang

Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

Kuei-Ting Chen

Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

Cheng-Jie Wang

Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

Yu-Cheng Kao

Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan

Hsiang Chen

Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, Taiwan

Yung-Sen Lin

Department of Chemical Engineering, Feng Chia University, Taichung, Taiwan