Materials (Feb 2024)

Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas Residence Time in Nitrogen Dielectric Barrier Discharge

  • Faegheh Fotouhiardakani,
  • Alex Destrieux,
  • Jacopo Profili,
  • Morgane Laurent,
  • Sethumadhavan Ravichandran,
  • Gowri Dorairaju,
  • Gaetan Laroche

DOI
https://doi.org/10.3390/ma17040875
Journal volume & issue
Vol. 17, no. 4
p. 875

Abstract

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This study aims to establish a correlation between the fragmentation process and the growth mechanisms of a coating deposited on a fluoropolymer. Deposition was carried out using dielectric barrier discharge at atmospheric pressure, employing an oxygen-containing organic precursor in a nitrogen environment. The findings reveal that the impact of precursor concentration on the formation of specific functionalities is more significant than the influence of treatment time. The X-ray photoelectron spectroscopy (XPS) results obtained indicate a reduction in the N/O ratio on the coating’s surface as the precursor concentration in the discharge increases. Fourier transform infrared spectroscopy (FTIR) analysis, conducted in the spectral range of 1500 cm−1 to 1800 cm−1, confirmed the connection between the chemical properties of plasma-deposited thin films and the concentration of organic precursors in the discharge. Furthermore, the emergence of nitrile moieties (C≡N) in the FTIR spectrum at 2160 cm−1 was noted under specific experimental conditions.

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