Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission
Xuanhao Wang,
Chenglin Shang,
An Pan,
Xingran Cheng,
Tao Gui,
Shuai Yuan,
Chengcheng Gui,
Keshuang Zheng,
Peijie Zhang,
Xiaolu Song,
Yanbo Li,
Liangchuan Li,
Cheng Zeng,
Jinsong Xia
Affiliations
Xuanhao Wang
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Chenglin Shang
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
An Pan
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Xingran Cheng
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Tao Gui
Huawei Technologies, Optical R&D Department, Dongguan 523000, China
Shuai Yuan
Huawei Technologies, Optical R&D Department, Dongguan 523000, China
Chengcheng Gui
Huawei Technologies, B & P Laboratory, Shenzhen 518000, China
Keshuang Zheng
Huawei Technologies, Optical R&D Department, Dongguan 523000, China
Peijie Zhang
Huawei Technologies, B & P Laboratory, Shenzhen 518000, China
Xiaolu Song
Huawei Technologies, B & P Laboratory, Shenzhen 518000, China
Yanbo Li
Huawei Technologies, Optical R&D Department, Dongguan 523000, China
Liangchuan Li
Huawei Technologies, Optical R&D Department, Dongguan 523000, China
Cheng Zeng
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Jinsong Xia
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
We successfully demonstrate a monolithic integrated dual-polarization in-phase/quadrature (IQ) modulator based on thin-film lithium niobate platform with a silicon substrate, which consists of IQ modulators, spot-size converters, and a polarization rotator combiner. When coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.
