The Effect of RF-Plasma Power on the Growth of III-Nitride Materials

Abstract

In this study, n-InGaN nanorods were grown directly on p-type Si (111) substrates by plasma- assisted molecular beam epitaxy (PA-MBE). The crystal structure is investigated using the reflection of high-energy electron diffraction patterns. Additionally, the morphology and optical properties of the InGaN nanorods were investigated using both scanning electron microscopy and room temperature photoluminescence spectra. The results showed that, the PL peak position shifted toward lower energy by increasing plasma power due to increase in In-concentration within InGaN nanorods. It can be observed that, through using optimum growth conditions, a uniform indium up to 34% can be achieved with no phase split-up or indium isolation. Thus, none of the mobile In-droplets on the surface were observed.

Keywords

• n-type InGaN Nanorods
• PA-MBE
• Photoluminescence Spectra
• Plasma Power