In this paper, we have demonstrated the feasibility of the proposed integrated chip by the experiments on its laser part of Vertical-cavity Surface-emitting Laser (VCSEL). The success of the integrated chip depends on the special designed cavity-in DBR, and the VCSEL's resonant cavity is composed by the cavity-in DBRs. With a gold reflector on top of the original integrated chip wafer to improve the Q value of the VCSEL's resonant cavity, the VCSEL is successful to lase. Its threshold current is 3 mA, the slope efficiency is 0.84 W/A and the estimated maximum light power is 30 mW. The experiment illustrates that the cavity-in DBR is reasonable and practical and makes foundation for the realization of the integrated chip in single-fiber bi-directional optical interconnects.
