Research on Narrow Linewidth External Cavity Semiconductor Lasers
Keke Ding,
Yuhang Ma,
Long Wei,
Xuan Li,
Junce Shi,
Zaijin Li,
Yi Qu,
Lin Li,
Zhongliang Qiao,
Guojun Liu,
Lina Zeng
Affiliations
Keke Ding
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Yuhang Ma
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Long Wei
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Xuan Li
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Junce Shi
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Zaijin Li
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Yi Qu
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Lin Li
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Zhongliang Qiao
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Guojun Liu
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Lina Zeng
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output.
