Rare Earth Ion-Doped Y<sub>2.95</sub>R<sub>0.05</sub>MgAl<sub>3</sub>SiO<sub>12</sub> (R = Yb, Y, Dy, Eu, Sm) Garnet-Type Microwave Ceramics for 5G Application
Zijun Ye,
Yu Jiang,
Minmin Mao,
Zhiyu Xiu,
Mengjiao Chi,
Guofa Wu,
Bing Liu,
Dawei Wang,
Bin Yang,
Kaixin Song
Affiliations
Zijun Ye
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Yu Jiang
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Minmin Mao
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Zhiyu Xiu
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Mengjiao Chi
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Guofa Wu
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Bing Liu
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
Dawei Wang
Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
Bin Yang
Faculty of Science and Engineering, University of Chester, Chester CH1 4BJ, UK
Kaixin Song
College of Electronics Information, Hangzhou Dianzi University, Hangzhou 310018, China
In this work, Y2.95R0.05MgAl3SiO12 (R = Yb, Y, Dy, Eu, Sm) microwave single-phase dielectric ceramics were successfully prepared via a conventional ceramic sintering technology by doping a series of rare earth elements (Yb, Y, Dy, Eu, Sm) with different ionic radii for the first time. The effects of A-sites occupied by rare earth elements on the microwave dielectric properties of Y2.95R0.05MgAl3SiO12 were studied using crystal structure refinement, a scanning electron microscope (SEM), bond valence theory, P-V-L theory, and infrared reflection spectroscopy. It was found that the ionicity of the Y-O bond, the lattice energy, the bond energy, and the bond valance of the Al(Tet)-O bond had important effects on the microwave dielectric properties. Particularly, the optimum microwave dielectric properties, εr = 9.68, Q × f = 68,866 GHz, and τf = −35.8 ppm/°C, were obtained for Y2.95Dy0.05MgAl3SiO12 when sintered at 1575 °C for 6 h, displaying its potential for 5G communication.
