Direct Observation of Carrier Transportation between Localized States in InGaN Quantum Wells
Yangfeng Li,
Yixiao Li,
Jie Zhang,
Yi Wang,
Tong Li,
Yang Jiang,
Haiqiang Jia,
Wenxin Wang,
Rong Yang,
Hong Chen
Affiliations
Yangfeng Li
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Yixiao Li
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Jie Zhang
Hunan San’an Semiconductor Co., Ltd., Changsha 410000, China
Yi Wang
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Tong Li
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Yang Jiang
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Haiqiang Jia
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Wenxin Wang
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Rong Yang
College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Hong Chen
Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Despite the large misfit dislocation densities, indium gallium nitride (InGaN) demonstrates high luminous efficiency both for electroluminescence and photoluminescence. The mechanism behind it has been interpreted as the existence of potential minima (i.e., localized states), which will screen the non-radiative recombination centers to avoid carriers being trapped by the defects. The existence of localized states has been testified by many experiments. However, almost all of the observations are indirect observations, and some experiments, such as those focused on whether the indium clusters observed by transmission electron microscopy are localized states, still remain controversial. Here, we report the direct observation of carrier transportation between localized states driven by temperature-dependent photoluminescence (TDPL) and excitation power-dependent PL in InGaN quantum wells. This enriches the experimental evidence on the existence of localized states.