State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Li Yurui
State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, Beijing100871, P.R. China
Xiang Hengtai
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Li Yuanrong
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Cao Hengzhen
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Ji Zhongyang
State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, Beijing100871, P.R. China
Liu Liu
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Xiao Xi
National Information Optoelectronics Innovation Center, China Information and Communication Technologies Group Corporation (CICT), Wuhan430074, China
Yin Jianbo
State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, Beijing100871, P.R. China
Guo Jingshu
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Dai Daoxin
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, 12377Zhejiang University, Zijingang Campus, Hangzhou310058, China
Silicon photonics with the advantages of low power consumption and low fabrication cost is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the SiGe photodetectors, supporting high-speed photodetection in wavelength bands beyond 1.6 μm on silicon. Here we realize a silicon-integrated four-channel wavelength division multiplexing (WDM) optical receiver based on a micro-ring resonator (MRR) array and four p-n homojunction GPDs. These photo-thermoelectric (PTE) GPDs exhibit zero-bias responsivities of ∼1.1 V W−1 and set-up limited 3 dB-bandwidth >67 GHz. The GPDs show good consistence benefiting from the compact active region array (0.006 mm2) covered by a single mechanically exfoliated hBN/graphene/hBN stack. Moreover, the WDM graphene optical receiver realized 4 × 16 Gbps non-return-to-zero optical signal transmission. To the best of our knowledge, it is the first GPD-array-based optical receiver using high-quality mechanically exfoliated graphene and edge graphene-metal contacts with low resistances. Apparently, our design is also compatible with CVD-grown graphene. This work sheds light on the large-scale integration of GPDs with high consistency and uniformity, enabling the application of high-quality mechanically exfoliated graphene, and promoting the development of the graphene photonic integrated circuits.
