Advanced Electronic Materials (Aug 2024)

Multi‐Functional Spin Photogalvanic Device Based on 2D Half‐Metallic Ferromagnets

  • Zhentao Fu,
  • Pinglan Yan,
  • Jin Li,
  • Chaoyu He,
  • Tao Ouyang,
  • Chao Tang,
  • Jianxin Zhong

DOI
https://doi.org/10.1002/aelm.202300884
Journal volume & issue
Vol. 10, no. 8
pp. n/a – n/a

Abstract

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Abstract Generating fully spin‐polarized currents (FSPC) and pure spin currents (PSC) are of great importance for spintronics. Half‐metallic ferromagnets, which generate 100% spin polarization, are considered as one of the most promising materials for applications in spintronics. However, the knowledge of intrinsic half‐metallic materials in the spin‐dependent photogalvanic effect is still poorly understood. Using first‐principle transport calculations, a robust approach is introduced to obtain FSPC and PSC by spin‐dependent photogalvanic effect in intrinsic half‐metallic materials. Based on the recently synthesized monolayer half‐metallic C(CN)3, a 2D spin photogalvanic device is built and it is demonstrated that the FSPC can be achieved in a wider photon energy range under both linearly and elliptically polarized light due to the half‐metallicity. It is intriguing to note that the device can be easily manipulated to transition between two modes: one for generating FSPC and another for generating PSC by setting the two leads in anti‐parallel configurations. Furthermore, a significant spin‐valve effect can be attained across various photon energies for both linearly and elliptically polarized light. The research shows that half‐metallic materials are an ideal platform for studying and generating FSPC and PSC, which presents a remarkable avenue for the development of advanced spintronic devices in the next generation.

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