Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

Abstract

Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.

Keywords

• monolayer
• ws2
• cvd method
• raman spectroscopy