Nanoscale Research Letters (Aug 2019)

Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

  • Chih-Chiang Shen,
  • Tsung-Chi Hsu,
  • Yen-Wei Yeh,
  • Chieh-Yu Kang,
  • Yun-Ting Lu,
  • Hon-Way Lin,
  • Hsien-Yao Tseng,
  • Yu-Tzu Chen,
  • Cheng-Yuan Chen,
  • Chien-Chung Lin,
  • Chao-Hsin Wu,
  • Po-Tsung Lee,
  • Yang Sheng,
  • Ching-Hsueh Chiu,
  • Hao-Chung Kuo

DOI
https://doi.org/10.1186/s11671-019-3107-7
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 6

Abstract

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Abstract We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

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