InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

Hai-Zhi Song; Mukhtar Hadi; Yanzhen Zheng; Bizhou Shen; Lei Zhang; Zhilei Ren; Ruoyao Gao; Zhiming M. Wang

doi:10.1186/s11671-017-1898-y

Nanoscale Research Letters (Feb 2017)

InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

Hai-Zhi Song,
Mukhtar Hadi,
Yanzhen Zheng,
Bizhou Shen,
Lei Zhang,
Zhilei Ren,
Ruoyao Gao,
Zhiming M. Wang

Affiliations

Hai-Zhi Song: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
Mukhtar Hadi: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China
Yanzhen Zheng: School of Optoelectronic Information, University of Electronic Science and Technology of China
Bizhou Shen: Department of Fundamental Laser-Optoelectronic Technology, Southwest Institute of Technical Physics
Lei Zhang: School of Optoelectronic Information, University of Electronic Science and Technology of China
Zhilei Ren: School of Optoelectronic Information, University of Electronic Science and Technology of China
Ruoyao Gao: School of Optoelectronic Information, University of Electronic Science and Technology of China
Zhiming M. Wang: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China

DOI: https://doi.org/10.1186/s11671-017-1898-y
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 7

Abstract

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Abstract A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 104–105 at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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