Dielectric properties of bismuth titanate ceramics containing SiO2 and Nd2O3 as additives

Abstract

Bismuth-titanate ceramics containing SiO2 and Nd2O3 as additives are synthesized by melt quenching method in the system Bi2O3-TiO2-Nd2O3-SiO2 in the temperature range of 1250–1500 °C. The phase composition of the obtained materials is determined by X-ray diffraction analysis and energy dispersive spectroscopy. Using scanning electron microscopy different microstructures are observed in the samples depending on the composition. Different values of conductivity, dielectric losses and relative permittivity are obtained depending on the composition. It is established that all investigated samples are dielectric materials with conductivity between 10^-9 and 10^-13 (Ω·cm)^-1 at room temperature, dielectric permittivity from 1000 to 3000 and dielectric losses tgδ between 0.0002 and 0.1.

Keywords

• Bismuth titanate
• Melt quenching
• Microstructure
• Electrical properties