Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing

Abstract

Logic-in-memory (LIM) circuits based on the material implication logic (IMPLY) and resistive random access memory (RRAM) technologies are a candidate solution for the development of ultra-low power non-von Neumann computing architectures. Such architectures could enable the energy-efficient implementation of hardware accelerators for novel edge computing paradigms such as binarized neural networks (BNNs) which rely on the execution of logic operations. In this work, we present the multi-input IMPLY operation implemented on a recently developed smart IMPLY architecture, SIMPLY, which improves the circuit reliability, reduces energy consumption, and breaks the strict design trade-offs of conventional architectures. We show that the generalization of the typical logic schemes used in LIM circuits to multi-input operations strongly reduces the execution time of complex functions needed for BNNs inference tasks (e.g., the 1-bit Full Addition, XNOR, Popcount). The performance of four different RRAM technologies is compared using circuit simulations leveraging a physics-based RRAM compact model. The proposed solution approaches the performance of its CMOS equivalent while bypassing the von Neumann bottleneck, which gives a huge improvement in bit error rate (by a factor of at least 108) and energy-delay product (projected up to a factor of 1010).

Keywords

• implication logic
• logic-in-memory
• memristor
• Boolean algebra
• RRAM
• BNN