Research progress in stannous oxide thin film transistors

Abstract

Due to its unique optical and electrical properties, p-type metal oxide materials stannous oxide has been favored by more and more people in various fields such as catalysis, sensing and optoelectronic devices.This paper focuses on the research and application of stannous oxide in thin film transistors. As a core component of display driver panels, thin film transistors play an important role in the display.The research progress of p-type stannous oxide thin film transistors was summarized in this paper, which includes the analysis of the microcosmic properties of stannous oxide, the preparation of stannous oxide thin film materials and the fabrication methods of transistors. By introducing the crystal and electronic structure of stannous oxide in details, the microcosmic regul-ation mechanism of the properties of tin oxide was discussed. Through the preparation of stannous oxide materials and the research and application of the devices, the problems of low current-to-switch ratio faced by stannous oxide thin film transistors were analyzed and their prospects in the direction of the complementary metal-oxide-semiconductor devices were put forward, in order to provide a refere-nce for the preparation of p-type metal oxide thin film transistors which are stable and eco-friendly.

Keywords

• p-type material
• stannous oxide
• thin-film transistor
• microcosmic regulation mechanism