Integrated Amorphous Carbon Film Temperature Sensor with Silicon Accelerometer into MEMS Sensor

Abstract

Amorphous carbon (a-C) has promising potential for temperature sensing due to its outstanding properties. In this work, an a-C thin film temperature sensor integrated with the MEMS silicon accelerometer was proposed, and a-C film was deposited on the fixed frame of the accelerometer chip. The a-C film was deposited by DC magnetron sputtering and linear ion beam, respectively. The nanostructures of two types of films were observed by SEM and TEM. The cluster size of sp2 was analyzed by Raman, and the content of sp2 and sp3 of the carbon film was analyzed by XPS. It showed that the DC-sputtered amorphous carbon film, which had a higher sp2 content, had better temperature-sensitive properties. Then, an integrated sensor chip was designed, and the structure of the accelerometer was simulated and optimized to determine the final sizes. The temperature sensor module had a sensitivity of 1.62 mV/°C at the input voltage of 5 V with a linearity of 0.9958 in the temperature range of 20~150 °C. The sensitivity of the sensor is slightly higher than that of traditional metal film temperature sensors. The accelerometer module had a sensitivity of 1.4 mV/g/5 V, a nonlinearity of 0.38%, a repeatability of 1.56%, a total thermomechanical noise of 509 μg over the range of 1 to 20 Hz, and an average thermomechanical noise density of 116 µg/√Hz, which is smaller than the input acceleration amplitude for testing sensitivity. Under different temperatures, the performance of the accelerometer was tested. This research provided significant insights into the convenient procedure to develop a high-performance, economical temperature–accelerometer-integrated MEMS sensor.

Keywords

• amorphous carbon film
• Temperature-Resistance Characteristics
• MEMS
• silicon accelerator
• integrated sensor