Identifikasi Gugus SiHx (x=1, 2 dan 3) pada Silikon Berpori dari Substrat Si (111) Tipe-P

Abstract

The study of identification of functional group SiHx (x=1, 2, 3) to typep Si (111) made by anodizatied silicon wafer in 0,3 ohm-cm hydrofluoric (HF) has been conducted. The objective of the research is to determine the effects of HF concentrations and anodization time on PS functional groups. HF concentration was varied to 10%, 20%, 30% and 40% the anodization time was varied to 10, 20, 40 and 60 minutes respectly. While the anodization it was used a magnetic stirrer to keep the homogenity of the solution. The existence of SiH groups is characterized by FTIR spectrofotometer. The results shows that SiH group functional appears around absorbtion area of 2112-2100 cm-1, 920-890 cm-1 and 856 cm-1. Where as the longer time anodization the fewer of SiH groups formed.

Keywords

• porous silicon (ps), functional group, ftir