Scattering of Charge Carriers in Thin Films PbTe:Bi

Abstract

The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio msurf/mbulk is considered.

Keywords

• плюмбум телурид
• легування
• розсіювання носіїв заряду
• рухливість