Gate dielectrics: process integration issues and electrical properties

Abstract

In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.

Keywords

• high-k dielectrics
• CMOS
• Pr2O3
• process integration
• resist removal
• wet chemical cleaning