Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide
D. Y. Guo,
Y. P. Qian,
Y. L. Su,
H. Z. Shi,
P. G. Li,
J. T. Wu,
S. L. Wang,
C. Cui,
W. H. Tang
Affiliations
D. Y. Guo
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
Y. P. Qian
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
Y. L. Su
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
H. Z. Shi
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
P. G. Li
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
J. T. Wu
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
S. L. Wang
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
C. Cui
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
W. H. Tang
State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at low temperature are amorphous, non-stoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide.
