Sensors (Oct 2021)

Ultra-Narrow SPP Generation from Ag Grating

  • Gerald Stocker,
  • Jasmin Spettel,
  • Thang Duy Dao,
  • Andreas Tortschanoff,
  • Reyhaneh Jannesari,
  • Gerald Pühringer,
  • Parviz Saeidi,
  • Florian Dubois,
  • Clement Fleury,
  • Cristina Consani,
  • Thomas Grille,
  • Elmar Aschauer,
  • Bernhard Jakoby

DOI
https://doi.org/10.3390/s21216993
Journal volume & issue
Vol. 21, no. 21
p. 6993

Abstract

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In this study, we investigate the potential of one-dimensional plasmonic grating structures to serve as a platform for, e.g., sensitive refractive index sensing. This is achieved by comparing numerical simulations to experimental results with respect to the excitation of surface plasmon polaritons (SPPs) in the mid-infrared region. The samples, silver-coated poly-silicon gratings, cover different grating depths in the range of 50 nm–375 nm. This variation of the depth, at a fixed grating geometry, allows the active tuning of the bandwidth of the SPP resonance according to the requirements of particular applications. The experimental setup employs a tunable quantum cascade laser (QCL) and allows the retrieval of angle-resolved experimental wavelength spectra to characterize the wavelength and angle dependence of the SPP resonance of the specular reflectance. The experimental results are in good agreement with the simulations. As a tendency, shallower gratings reveal narrower SPP resonances in reflection. In particular, we report on 2.9 nm full width at half maximum (FWHM) at a wavelength of 4.12 µm and a signal attenuation of 21%. According to a numerical investigation with respect to a change of the refractive index of the dielectric above the grating structure, a spectral shift of 4122nmRIU can be expected, which translates to a figure of merit (FOM) of about 1421 RIU−1. The fabrication of the suggested structures is performed on eight-inch silicon substrates, entirely accomplished within an industrial fabrication environment using standard microfabrication processes. This in turn represents a decisive step towards plasmonic sensor technologies suitable for semiconductor mass-production.

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