Raman Characterization on Two-Dimensional Materials-Based Thermoelectricity
Zuoyuan Dong,
Hejun Xu,
Fang Liang,
Chen Luo,
Chaolun Wang,
Zi-Yu Cao,
Xiao-Jia Chen,
Jian Zhang,
Xing Wu
Affiliations
Zuoyuan Dong
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Hejun Xu
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Fang Liang
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Chen Luo
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Chaolun Wang
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Zi-Yu Cao
Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
Xiao-Jia Chen
Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
Jian Zhang
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Xing Wu
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
The emergence and development of two-dimensional (2D) materials has provided a new direction for enhancing the thermoelectric (TE) performance due to their unique structural, physical and chemical properties. However, the TE performance measurement of 2D materials is a long-standing challenge owing to the experimental difficulties of precise control in samples and high demand in apparatus. Until now, there is no universal methodology for measuring the dimensionless TE figure of merit (ZT) (the core parameter for evaluating TE performance) of 2D materials systematically in experiments. Raman spectroscopy, with its rapid and nondestructive properties for probing samples, is undoubtedly a powerful tool for characterizing 2D materials as it is known as a spectroscopic ‘Swiss-Army Knife’. Raman spectroscopy can be employed to measure the thermal conductivity of 2D materials and expected to be a systematic method in evaluating TE performance, boosting the development of thermoelectricity. In this review, thermoelectricity, 2D materials, and Raman techniques, as well as thermal conductivity measurements of 2D materials by Raman spectroscopy are introduced. The prospects of obtaining ZT and testing the TE performance of 2D materials by Raman spectroscopy in the future are also discussed.
