On the determination of quantum dot sizes by spectroscopic methods

Abstract

The dependences of the fundamental transition on the quantum dot size obtained experimentally at various temperatures using different measuring methods are analyzed and compared. A simple analytical relationship for approximation of these dependences is proposed. The possibility to extrapolate the results for the case of arbitrary temperature is discussed. Semiconductor low-dimensional systems, in particular semiconductor quantum dots, attract a considerable interest due to the substantial size dependence of the energy of quantum transitions in them. This feature is promising for development of absorption and luminescent materials necessary for solving a wide range of applied problems from optoelectronic imaging and data transfer devices to biological fluorescence labels [1, 2].