Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga₂O₃ Single Crystals with the Czochralski Method

Abstract

As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga2O3 single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two cases of internal radiation and no internal radiation were compared to study the effect of radiation on the process parameters. The temperature distribution of the furnace, the temperature field, and the flow field of the melt was calculated. The temperature, the temperature gradient of the crystal, the temperature at the bottom of the crucible, and the heater power were studied for the crystals grown in the two cases of radiation. The results obtained in this study clearly show that the loss calculated by including the internal radiation is higher compared to that including the surface radiation.

Keywords

• computer simulation
• radiation
• bulk β-Ga₂O₃ growth