Lightweight diamond/Cu interface tuning for outstanding heat conduction
Wenjie Dou,
Congxu Zhu,
Xiwang Wu,
Xun Yang,
Wenjun Fa,
Yange Zhang,
Junfeng Tong,
Guangshan Zhu,
Zhi Zheng
Affiliations
Wenjie Dou
Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics Zhengzhou University Zhengzhou China
Congxu Zhu
Key Laboratory of Micro‐Nano Materials for Energy Storage and Conversion of Henan Province, College of Chemical and Materials Engineering Xuchang University Xuchang China
Xiwang Wu
Key Laboratory of Micro‐Nano Materials for Energy Storage and Conversion of Henan Province, College of Chemical and Materials Engineering Xuchang University Xuchang China
Xun Yang
Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics Zhengzhou University Zhengzhou China
Wenjun Fa
Key Laboratory of Micro‐Nano Materials for Energy Storage and Conversion of Henan Province, College of Chemical and Materials Engineering Xuchang University Xuchang China
Yange Zhang
Key Laboratory of Micro‐Nano Materials for Energy Storage and Conversion of Henan Province, College of Chemical and Materials Engineering Xuchang University Xuchang China
Junfeng Tong
Work‐Station of Zhongyuan Scholars of Henan Province, Henan Huanghe Whirlwind Co. Ltd. Changge China
Guangshan Zhu
Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education Northeast Normal University Changchun China
Zhi Zheng
Key Laboratory of Micro‐Nano Materials for Energy Storage and Conversion of Henan Province, College of Chemical and Materials Engineering Xuchang University Xuchang China
Abstract With rapid developments in the field of very large‐scale integrated circuits, heat dissipation has emerged as a significant factor that restricts the high‐density integration of chips. Due to their high thermal conductivity and low thermal expansion coefficient, diamond/Cu composites have attracted considerable attention as a promising thermal management material. In this study, a surface tungsten carbide gradient layer coating of diamond particles has been realized using comprehensive magnetron sputtering technology and a heat treatment process. Diamond/Cu composites were prepared using high‐temperature and high‐pressure technology. The results show that, by adjusting the heat treatment process, tungsten carbide and di‐tungsten carbide are generated by an in situ reaction at the tungsten–diamond interface, and W–WC–W2C gradient layer‐coated diamond particles were obtained. The diamond/Cu composites were sintered by high‐temperature and high‐pressure technology, and the density of surface‐modified diamond/Cu composites was less than 4 g cm−3. The W–WC–W2C@diamond/Cu composites have a thermal diffusivity as high as 331 mm2 s−1, and their thermal expansion coefficient is as low as 1.76 × 10−6 K−1. The interface coherent structure of the gradient layer‐coated diamond/copper composite can effectively improve the interface heat transport efficiency.
