InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells

Chen Zhichu; Muhammad Tahir; Fida Muhammad; Fakhra Aziz; Ambreen Ayub; Fazal Badshah; Moamen S. Refat; Sadiye M. Cakmak; Shanza Rehan; Abdel Majid A. Adam; Amnah Mohammed Alsuhaibani; Afida Ayob; Mahidur R Sarker; Adam Khan

Results in Physics (Feb 2025)

InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells

Chen Zhichu,
Muhammad Tahir,
Fida Muhammad,
Fakhra Aziz,
Ambreen Ayub,
Fazal Badshah,
Moamen S. Refat,
Sadiye M. Cakmak,
Shanza Rehan,
Abdel Majid A. Adam,
Amnah Mohammed Alsuhaibani,
Afida Ayob,
Mahidur R Sarker,
Adam Khan

Affiliations

Chen Zhichu: School of Electrical and Information Engineering, Hubei University of Automotive Technology, Shiyan 442002, People's Republic of China
Muhammad Tahir: Semiconductor Physics & Devices Laboratory, Department of Physics, Faculty of Physical and Numerical Sciences, Abdul Wali Khan University Mardan, 23200, Pakistan; Corresponding authors.
Fida Muhammad: Semiconductor Physics & Devices Laboratory, Department of Physics, Faculty of Physical and Numerical Sciences, Abdul Wali Khan University Mardan, 23200, Pakistan
Fakhra Aziz: Department of Electronics, University of Peshawar, KP, Pakistan
Ambreen Ayub: Department of Physics, Women University Mardan, 23200 KP, Pakistan
Fazal Badshah: School of Electrical and Information Engineering, Hubei University of Automotive Technology, Shiyan 442002, People's Republic of China
Moamen S. Refat: Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
Sadiye M. Cakmak: Program of Medical Monitoring Techniques, Osmangazi University, Eskisehir 26040 Eskisehir, Turkey
Shanza Rehan: Faculty of Materials and Chemical Engineering, GIK Institute of Engineering Sciences and Technology, 23640 Topi, Pakistan
Abdel Majid A. Adam: Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
Amnah Mohammed Alsuhaibani: Department of Physical Sport Sciences, College of Sport Sciences & Physical Activity, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
Afida Ayob: Centre for Integrated Systems Engineering and Advanced Technologies (INTEGRA), Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia; Corresponding authors.
Mahidur R Sarker: Institute of Visual Informatics, Universiti Kebangsaan, Malaysia Bangi, Selangor 43600, Malaysia; Universidad de Diseno, Innovacion y Tecnología, UDIT, Av. Alfonso XIII, 97, 28016 Madrid, Spain
Adam Khan: Department of Electronics Engineering, University of Engineering & Technology, Peshawar (Abbottabad Campus), Abbottabad, Pakistan

Journal volume & issue: Vol. 69
p. 108120

Abstract

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Herein, we report on the synthesis and characterization of p-type semiconductor indium phosphide/zinc sulphide (InP/ZnS) core/shell quantum dots (QDs) prepared via a simple solvothermal method and their potential application in bulk heterojunction (BHJ) flexible solar cell (SC). The BHJ SC composed of donor–acceptor (D-A) configuration at nanoscale provides larger interfacial junction area throughout the bulk volume of the photo-absorber D-A blend that facilitates excitons to efficiently dissociate within the bulk layer at D-A interface. Hence, InP/ZnS core–shell QDs and a fullerene derivative – phenyl C61 butyric acid methyl ester (PCBM) – are used as hybrid inorganic–organic D-A materials, respectively, to fabricate Ag/LiF/InP/ZnS-PCBM/P3HT/ITO/PET BHJ flexible SC. Indium tin oxide (ITO) coated on polyethylene terephthalate (PET), poly(3-hexylthiophene) (P3HT), lithium fluoride (LiF) and silver (Ag) are employed as a flexible substrate, hole transport layer (HTL), electron transport layer (ETL) and counter electrode, respectively. Photovoltaic (PV) properties of the fabricated BHJ flexible SC are studied under standard testing conditions (STC) i.e., 25 0C, 1.5 AM global and 100 mW/cm2 irradiation, which exhibit fill factor (FF) of 59 ± 0.02 % and power conversion efficiency (PCE) of 4.22 ± 0.05 %. Also, the heterojunction characteristics are investigated in dark condition (0 lx) to find series resistance (Rs), ideality factor (n), and reverse saturation current (I0). X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet–visible (UV–vis) spectroscopy are performed to further investigate the properties of InP/ZnS-PCBM thin films. Transmission electron microscopy (TEM) image of InP/ZnS core/shell QDs confirmed the successful synthesis of QDs having an average size of 5 ± 1 nm. The InP/ZnS-PCBM D-A photo-absorber layer reveals its potential as one of good candidates for high performance BHJ flexible SCs.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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