Enhanced band-filling effect in halide perovskites via hydrophobic conductive linkers

Abstract

Summary: To approach the theoretical efficiency of perovskite solar cells (PSCs), the defects in perovskites should be managed. Among different types of defects, halide vacancies easily form on the surface of perovskite grains (PGs), hindering perovskite stability and the charge-transport process by trapping charge carriers. In this work, oxidized black phosphorus quantum dots (O-BPQDs) are incorporated into a perovskite to resolve these issues. Oxygen atoms of the O-BPQDs interact with uncoordinated Pb (halide vacancies), forming grain interconnections. These interactions reduce halide vacancies and suppress the overall recombination kinetics. Along with defect reduction, the O-BPQDs offer an efficient charge-transport channel across individual PGs. We achieve a best power-conversion efficiency (PCE) of 22.34% for SnO2-based PSCs and of 23.1% for TiO2-based PSCs. These PSCs exhibit moisture stability in a relative humidity (RH) 40% environment comparable to 3D/2D perovskites. Our strategy provides practical applicability and versatility for PSCs to approach the theoretical PCE value.

Keywords

• black phosphorus quantum dots
• grain linking
• halide vacancy passivation
• efficient charge transport
• band filling
• humidity resistance