Effect of thermal annealing on an anisotropy of electroconductivity and photoconductivity of nanostructured silicon

Abstract

An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along various crystal directions in different ways. The obtained results are explained by the model of charge carriers transfer considering the presence of potential barriers on the boundaries of connecting silicon nanocrystals.

Keywords

• porous silicon
• electrical conductivity
• anisotropy
• thermal oxidation
• potential barriers