First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
Kai-Huang Chen,
Chien-Min Cheng,
Na-Fu Wang,
Hsiao-Wen Hung,
Cheng-Ying Li,
Sean Wu
Affiliations
Kai-Huang Chen
Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan
Chien-Min Cheng
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
Na-Fu Wang
Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan
Hsiao-Wen Hung
Green Energy and Environment Research Laboratories, Lighting Energy-Saving Department, Intelligent Energy-Saving Systems Division, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
Cheng-Ying Li
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
Sean Wu
Department of Chemical and Materials Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan
In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant variety properties and the reaction time were observed. To verify the decay reaction mechanism in the reset state, vanadium oxide thin films from RRAM devices were measured by different constant voltage sampling and exhibited the same decay reaction rate constant. Finally, the electrical conduction transfer mechanism and metallic filament forming model described by I-V switching properties of the RRAM devices were proven and investigated.
