Peculiarities of Morphology Formation of Silicon Surface under the Action of Laser Pulses

Abstract

The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientation (111) (110) (100) and on planes, cut at an angle of 6° to the plane (100) and amorphous layers В2О3deposited on the surface of silicon were presented. The results can be used to determine the crystallographic orientation of the semiconductor surface and express assessment of disorientation degree of crystal surface. Keywords: electron-hole plasma, recrystalized area, periodic structures.