Gigahertz femtosecond laser-by a novel asymmetric one-dimensional photonic crystal saturable absorber device with defect layer
Song Chun-Yu,
Chen Hua-Long,
Wang Yong-Jie,
Jin Liang,
Xu Ying-Tian,
Shi Lin-Lin,
Zou Yong-Gang,
Ma Xiao-Hui,
Song Yu-Feng,
Wang Cong,
Zhang Ya-Ting,
Lin Ja-Hon,
Zhang He,
Zhang Han,
Yao Jian-Quan
Affiliations
Song Chun-Yu
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Chen Hua-Long
School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin300072, P. R. China
Wang Yong-Jie
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Jin Liang
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Xu Ying-Tian
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Shi Lin-Lin
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Zou Yong-Gang
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Ma Xiao-Hui
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Song Yu-Feng
School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin300072, P. R. China
Wang Cong
School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin300072, P. R. China
Zhang Ya-Ting
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen518060, P. R. China
Lin Ja-Hon
Institute of Electro-Optical Engineering, National Taipei University of Technology, Taipei10608, Taiwan
Zhang He
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, P. R. China
Zhang Han
School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin300072, P. R. China
Yao Jian-Quan
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen518060, P. R. China
High repetition frequency (HRF) ultrashort pulse fiber laser has been widely used in laser cold processing. The technical solutions such as short cavity length fiber laser have been proposed to achieve HRF ultrashort pulse output recently. However, the application of material-based saturable absorbers in this field has been astricted due to the low modulation depth, low damage resistance threshold, and high saturation fluence. Here, we designed a one-dimensional asymmetric photonic crystal with defect layer (1D-APCDL) as a novel saturable absorber, where the defect layer is Bi1.6Sb0.4Te3 with high modulation depth. The harmonic pulse with 3.82 GHz repetition frequency is achieved at the wavelength of 1562 nm, which is the highest repetition frequency of the topological insulator-based ring fiber laser so far to the best of our knowledge. The research provides a new saturable absorber solution, and provides a new idea for the application of material-based nonlinear optical chip in high-repetition frequency ultrashort pulse fiber lasers.
